首页> 外国专利> Monolithic integrated circuit device having microwave power amplifier including a matching circuit using distributed lines

Monolithic integrated circuit device having microwave power amplifier including a matching circuit using distributed lines

机译:具有包括使用分布式线路的匹配电路的微波功率放大器的单片集成电路装置

摘要

A microwave multi-stage power amplifier has matching circuits for input and output stages and one or more inter-stage matching circuits. The amplifier and a signal output pad and first and second voltage supply pads are formed at one and the same semi-insulating substrate. A first FET in the output stage has its drain connected to the first voltage supply pad through a first distributed line and further connected to the signal output pad through a second distributed line in which the first and second distributed lines contribute to formation of the matching circuit for the output stage. A second FET in a stage preceding to the output stage has its drain connected to the second voltage supply pad through a third distributed line serving as a connection conductor. The first distributed line has a width larger than that of the third distributed line and has a length which limits an impedance seen at the drain of the output stage FET towards the first voltage supply pad at an operation frequency of the amplifier to a value other than infinity.
机译:一种微波多级功率放大器,具有用于输入和输出级的匹配电路以及一个或多个级间匹配电路。放大器和信号输出垫以及第一和第二电压供应垫形成在一个相同的半绝缘基板上。输出级中的第一FET的漏极通过第一分布线连接到第一电压供应焊盘,并通过第二分布线连接到信号输出焊盘,其中第一和第二分布线有助于形成匹配电路用于输出阶段。在输出级之前的级中的第二FET的漏极通过用作连接导体的第三分布线连接到第二电压供应焊盘。第一分布线的宽度大于第三分布线的宽度,并且其长度将在放大器的工作频率下在输出级FET的漏极处朝向第一电压供应焊盘的阻抗限制为除无限。

著录项

  • 公开/公告号US5574402A

    专利类型

  • 公开/公告日1996-11-12

    原文格式PDF

  • 申请/专利权人 HITACHI LTD.;

    申请/专利号US19950524188

  • 申请日1995-09-06

  • 分类号H03F3/193;H03F3/195;

  • 国家 US

  • 入库时间 2022-08-22 03:11:06

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