GaAs single crystal wafer and GaAs liquid phase epitaxial wafer

摘要

Gallium arsenide single crystal wafer has surfaces formed as a substrate for growing a GaAs- or AlGaAs-layer of n-type and a GaAs- or AlGaAS-layer of p-type by means of liquid phase epitaxy using silicon as amphoteric dopant. The surface opposite {100} is tilted by 0.02[deg] - 0.2[deg]. Preferred Features: The surface opposite {100} is tilted by 0.03[deg] - 0.15[deg].