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Investigation of the Blistering and Exfoliation Mechanism of GaAs Wafers and SiO2/Si3N4/GaAs Wafers by He+ and H+ Implantation

机译：GaAs晶片和SiO2 / Si3N4 / GaAs晶片的起泡和剥离机理研究HE +和H +植入

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Rui Huang; Tian Lan; Chong Li; Jing Li; Zhiyong Wang;
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1. Fabrication of GaAs laser diodes on Si using low-temperature bonding of MBE-grown GaAs wafers with Si wafers [J] . D. Cengher, Z. Hatzopoulos, S. Gallis, Journal of Crystal Growth . 2003,第1a4期

机译：使用MBE生长的GaAs晶片与Si晶片的低温键合在Si上制造GaAs激光二极管
2. Investigation of room-temperature wafer bonded GaInP/GaAs/InGaAsP triple-junction solar cells [J] . Yang Wen-xian, Dai Pan, Ji Lian, Applied Surface Science . 2016,第deca15期

机译：室温晶圆键合GaInP / GaAs / InGaAsP三结太阳能电池的研究
3. Theoretical and experimental investigation of watt-level wafer scale integration microwave and millimeter-wave GaAs and AlGaAs frequency multipliers [J] . Hwu R.H., Sadwick L.P. IEEE Transactions on Electron Devices . 1989,第11期

机译：瓦特级晶片级集成微波和毫米波GaAs和AlGaAs倍频器的理论和实验研究
4. Investigation of GaAs Wafer Surface Blistering by Hydrogen Implantation [C] . Yu-Lin Guo, Jia Zhou, Shi-Yang Zhu, International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN) . 2006

机译：氢注入GaAs晶片表面起泡的研究
5. Analysis and modeling of physical mechanisms contributing to the AlGaAs/GaAs heterojunction bipolar transistor reliability. [D] . Sheu, Shyh-Horng. 1997

机译：分析和建模有助于AlGaAs / GaAs异质结双极晶体管可靠性的物理机制。
6. Publisher Correction: The photoelastic coefficient ... formula ... of H+ implanted GaAs as a function of defect density [O] . Andrey Baydin, Halina Krzyzanowska, Rustam Gatamov, -1

机译：发布者校正：H +注入的GaAs的光弹性系数...公式...作为缺陷密度的函数
7. Hydrogen Ion Implantation Mechanism in GaAs-on-insulator Wafer Formation by Ion-cut Process [O] . Hyung-joo Woo, Han-woo Choi, Joon-kon Kim 2015

机译：离子切割工艺形成Gaas绝缘体晶圆的氢离子注入机制
8. Hydrogen implanted 1.3 (micro)m vertical cavity surface-emitting lasers with dielectric and wafer-boned GaAs/AlAs mirrors [R] . Qian, Y. , Zhu, Z. H. , Lo, Y. H. , 1997

机译：氢注入1.3（微米）垂直腔表面发射激光器，带有电介质和晶片键合Gaas / alas反射镜

Investigation of the Blistering and Exfoliation Mechanism of GaAs Wafers and SiO2/Si3N4/GaAs Wafers by He+ and H+ Implantation

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