A method for exposing of polycrystalline regions on damaged or structurally degenerated oxide islands in a semiconductor substrate

摘要

Process for identifying offsets comprises inserting a substrate (102) coated with an epitaxial layer (101) in a testing device, etching the epitaxial layer faster than the offsets in an etching solution, uncovering oxide islands (103) during etching, forming offset markers (104) assigned to the uncovered oxide islands, localizing the offsets using a defect density device in the testing device, outputting a defect density distribution as a result of the testing process, and removing the tested substrate having a partially etched epitaxial layer from the testing device. An Independent claim is also included for a testing device for carrying out the above process comprising a substrate insertion device, an etching device, a localization device, an output device, and a removal device. Preferred Features: The etching process is carried out with an ammonia solution or with alkaline solutions such as TMAH, KOH, NaOH, choline, or ethylenediamine.