A method for compensating for different heights of the steps when and for the production of planar oxide layers in an integrated semiconductor circuit arrangement of conductors

摘要

The present invention relates to a method for the planarization of the surface of a on a semiconductor body (3, 4) is applied to the insulating layer (7, 8). Regions (2) with a lower step height of the insulating layer (8) are covered with a block mask (11) is covered, in order to then regions (1) with a larger step height of the insulating layer (7) to be able to selectively etching.