METHOD FOR FORMING RESIDUE FREE PATTERNED CONDUCTOR LAYERS UPON HIGH STEP HEIGHT INTEGRATED CIRCUIT SUBSTRATES

摘要

A method for forming a residue free patterned conductorlayer upon a high step height integrated circuit substrate. First,there is provided a semiconductor substrate having formed thereona high step height patterned integrated circuit layer. Formed uponthe high step height patterned integrated circuit layer is ablanket conductor layer, and formed upon the blanket conductorlayer is a patterned photoresist layer. The portions of theblanket conductor layer exposed through the patterned photoresistlayer are etched through an anisotropic etch process to leaveremaining a patterned conductor layer upon the surface of the highstep height patterned integrated circuit layer and conductor layerresidues at a lower step level of the high step height patternedintegrated circuit layer. The patterned photoresist layer is thenreflowed to cover exposed edges of the patterned conductor layer.Finally, the conductor layer residues at the lower step level ofthe high step height patterned integrated circuit layer are removedthrough an isotropic etch process.(FIGURE 1 IS SUGGESTED FOR PUBLICATION)