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Semiconductor component for semiconductor integrated circuit, includes terminal region for electrical connection formed partially within trench which is provided in semiconductor substrate
Semiconductor component for semiconductor integrated circuit, includes terminal region for electrical connection formed partially within trench which is provided in semiconductor substrate
A trench (30) having wall region (32b) is formed in semiconductor substrate (20). An upper trench section (30o) is included in wall regions of trench. A contact region is formed outside and proximate to trench in the region of upper trench section. A terminal region for electrical connection is formed within the trench. A trench side region having width narrower than width of trench is included in the trench. Independent claims are also included for the following: (1) trench structure transistor; (2) trench MOSFET; (3) insulated gate bipolar transistor; and (4) field plate transistor.
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