Manufacturing process for manufacturing a spatial structure in a semiconductor substrate and semiconductor substrate with a device for etching a spatial structure in the semiconductor substrate

摘要

The invention relates to a process for producing a semiconductor substrate (1) is made of a semiconductor material with spatially etched structures, in particular of trench - structures for half conductor memory cells. First, a relief structure in a surface (2) of the semiconductor substrate (1) generates. Subsequently, an etch resistant layer (5) in a region (4) a side wall of the relief structure is deposited, so that during subsequent etching steps, the side wall substantially is not etched. Subsequently, an etching agent introduced into the relief structure and a potential field in the semiconductor substrate (1) is applied. As a result, a spatial structure, starting from a not from the etch-resistant layer (5) which are covered region of the relief structure, etched, wherein the spatial structure as a function of the potential field is.