A process for the preparation of a semiconductor memory device by the use of a reference frame arf - laser beam exposed photoresist - pattern

摘要

A method for producing a semiconductor memory device comprises the steps of forming a mask layer on a target layer to be etched, applying a photoresist on the mask layer, exposing the photoresist by inserting a light source whose wavelength of about 157 nm to 193 nm, forming a photoresist - pattern by development of the photoresist, forming a mask pattern by selective etching of the mask layer with an etching gas, with the exception of a fluorine-based gas by insertion of the photoresist - pattern and an etching mask; and selectively etching of the target layer by insertion of the mask pattern as an etching mask composed of.