首页>
外国专利>
Method for manufacturing semiconductor memory device by using photoresist pattern exposed with ArF laser beam
Method for manufacturing semiconductor memory device by using photoresist pattern exposed with ArF laser beam
展开▼
机译:利用暴露有ArF激光束的光刻胶图形制造半导体存储器件的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method for manufacturing a semiconductor memory device includes the steps of forming a mask layer on a target layer to be etched, coating a photoresist on the mask layer, exposing the photoresist by using a light resource whose wavelength is of about 157 nm to 193 nm, forming a photoresist pattern by developing the photoresist, forming a mask pattern by selectively etching the mask layer with an etching gas except of fluorine-based gases by using the photoresist pattern as an etching mask; and selectively etching the target layer by using the mask pattern as an etching mask.
展开▼