Field effect transistor used as power device for high power application comprises channel layer comprising a wide bandgap semiconductor

摘要

A field effect transistor comprises channel layer comprising a wide bandgap semiconductor, source and drain regions on first and second sides of channel layer, respectively, insulating resin film comprising a voltage and heat resisting resin and covering the channel layer and source and drain regions and formed with through openings and gate, source and drain electrodes. A field effect transistor (FET) comprises: (a) channel layer comprising a wide bandgap semiconductor; (b) source and drain regions on first and second sides of channel layer, respectively; (c) insulating resin film comprising a voltage and heat resistant resin covering the channel layer and source and drain regions and formed with through openings; and (d) gate, source and drain electrodes comprising electrode materials which are individually filled in the through openings. An Independent claim is also included for a manufacturing method for an FET comprising: (1) forming a channel layer, source region and drain region on a substrate; (2) forming an insulating resin film; (3) forming through openings in the insulating resin film; and (4) filling electrode materials into the through openings to form gate, source and drain electrodes.