METHOD FOR MANUFACTURING NITRIDE CRYSTAL OF GROUP III ELEMENT, NITRIDE CRYSTAL OF GROUP III ELEMENT OBTAINED BY THE SAME, AND SEMICONDUCTOR DEVICE OBTAINED BY USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a nitride crystal of a group III element by which the carrier concentration can be easily controlled, the nitride crystal of the group III element obtained by the method, and a semiconductor device obtained by using the nitride crystal.;SOLUTION: The method for manufacturing the nitride crystal of the group III element includes a process for growing the crystal by reacting the group III element, nitrogen and a dopant in a melt containing an alkali metal in an atmosphere of a gas containing the nitrogen-containing gas and the dopant. As the group III element, at least one selected from, for example, Ga, Al and In can be used.;COPYRIGHT: (C)2005,JPO&NCIPI