Group III element nitride crystal manufacturing method, group III element nitride crystal, semiconductor device, semiconductor device manufacturing method, and group III element nitride crystal manufacturing apparatus

摘要

Provided is a production method for growing a group III element nitride crystal using a surface on the -c plane side as a crystal growth surface. The present invention is a method for producing a group III element nitride crystal, which includes a vapor phase growth step in which a group III element nitride crystal 12 is grown on the crystal growth surface of a group III element nitride seed crystal 11 by a vapor phase growth method. The vapor phase growth step is a step of growing a group III element nitride crystal 12 by reacting a group III element metal, an oxidizing agent, and a nitrogen-containing gas, or group III element oxidation. A reduced gas generation step of generating a reduced gas of the group III element oxide by reacting an oxide and a reducing gas; and a reaction of the reduced gas and a nitrogen-containing gas to generate a group III element nitride A step of generating a crystal 12, wherein the crystal growth surface is a surface on the −c plane side, the crystal growth temperature is 1200 ° C. or higher, and in the vapor phase growth step, Growing group III element nitride crystals in approximately -c direction And features.