首页> 外国专利> CAP MELT THIN FILM MANUFACTURING METHOD, AND METHOD FOR MANUFACTURING MGB2 SUPERCONDUCTING THIN FILM USING THE METHOD

CAP MELT THIN FILM MANUFACTURING METHOD, AND METHOD FOR MANUFACTURING MGB2 SUPERCONDUCTING THIN FILM USING THE METHOD

机译:帽熔体薄膜制造方法以及使用该方法制造MGB2超导薄膜的方法

摘要

PPROBLEM TO BE SOLVED: To provide a method for obtaining a compound thin film of sufficient characteristics by manufacturing a thin film formed of a compound consisting of components of greatly different melting points, accordingly a compound consisting of components of greatly different vapor pressures, by a vacuum vapor deposition method, and heat-treating the obtained thin film in the same vacuum, and to provide a MgBSB2/SBsuperconducting thin film manufacturing method using the method. PSOLUTION: A base layer 12 consisting of components of different melting points is deposited on a substrate 11 under a high vacuum, and a cap layer 13 consisting of a component of higher melting point out of the components of the compound is deposited on the base layer 12. The reaction of the components is performed by the heat treatment at a temperature below the melting point of the component of higher melting point to obtain a compound thin film 14. PCOPYRIGHT: (C)2004,JPO
机译:<要解决的问题:提供一种通过制造由熔点差异很大的成分组成的化合物形成的薄膜,从而得到具有足够特性的化合物薄膜的方法,该化合物由熔点差异很大的成分组成通过真空蒸镀法,将得到的薄膜在相同的真空度下进行热处理,从而提供使用该方法的MgB 2 超导薄膜的制造方法。

解决方案:在高真空下将由不同熔点的成分组成的基础层12沉积在基板11上,并且在该化合物的成分中沉积由较高熔点的成分组成的覆盖层13。通过在低于较高熔点的组分的熔点的温度下进行热处理来进行组分的反应,以获得化合物薄膜14。

COPYRIGHT:(C)2004,JPO

著录项

  • 公开/公告号JP2004176174A

    专利类型

  • 公开/公告日2004-06-24

    原文格式PDF

  • 申请/专利权人 JAPAN SCIENCE & TECHNOLOGY AGENCY;

    申请/专利号JP20030363818

  • 发明设计人 UCHIYAMA TETSUJI;

    申请日2003-10-23

  • 分类号C23C14/58;C23C14/06;C23C14/24;C23C14/28;H01B12/06;H01B13/00;H01L39/24;

  • 国家 JP

  • 入库时间 2022-08-21 23:31:55

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号