CAPPING MELT THIN FILM FORMATION METHOD AND METHOD FOR FORMING MGB2 SUPERCONDUCTING THIN FILM USING THE METHOD

摘要

PPROBLEM TO BE SOLVED: To provide a method capable of forming a thin film consisting of a compound of a plurality of materials greatly varying in melting points and consequently greatly varying in vapor pressures by a vacuum vapor deposition method and of obtaining a compound thin film having sufficient characteristics by performing a heat treatment within the same vacuum condition and to provide a method for forming an MbBSB2/SBsuperconducting thin film by using the above method. PSOLUTION: The film 12 of the material having the low melting point is coated with the film 13 of the material having the high melting point, and thereafter temperature is increased and both the materials are reacted by a solid phase diffusion reaction or melt reaction to form the compound thin film 14. The material 12 having the high melting point is obstructed from being diffused to the outside of the film and is detained within the film by the film 13 of the material having the high melting point in spite of the temperature increase and therefore the thin film 14 consisting of the compound of both the materials can be formed. Also, the contamination of the apparatus does not occur and therefore the thin film of the other material can be formed in the same vacuum and a high compound function device can be formed. The in-situ formation of the MbBSB2/SBsuperconducting thin film is enabled by using the method. PCOPYRIGHT: (C)2004,JPO