首页> 外国专利> METHOD FOR MANUFACTURING SUPERCONDUCTING THIN FILM FORMED OF OXIDE SUPERCONDUCTOR HAVING NON SUPERCONDUCTING REGION IN IT, METHOD FOR MANUFACTURING SUPERCONDUCTING DEVICE UTILIZINGTHE SUPERCONDUCTING THIN FILM AND SUPERCONDUCTING THIN FILM MANUFACTURED THEREBY

METHOD FOR MANUFACTURING SUPERCONDUCTING THIN FILM FORMED OF OXIDE SUPERCONDUCTOR HAVING NON SUPERCONDUCTING REGION IN IT, METHOD FOR MANUFACTURING SUPERCONDUCTING DEVICE UTILIZINGTHE SUPERCONDUCTING THIN FILM AND SUPERCONDUCTING THIN FILM MANUFACTURED THEREBY

机译:制造具有非超导区域的氧化物超导体的超导电薄膜的制造方法,利用超导电薄膜的超导电装置的制造方法以及由其制造的超导电薄膜的制造方法

摘要

For manufacturing a superconducting thin film having at least one non-superconducting region at and near its surface portion, an oxide superconductor thin film (2) is formed on a surface of the substrate (1). The oxide superconductor thin film is heated in high vacuum environment so that oxygen of the oxide superconductor crystals escapes from the surface of the oxide superconductor thin film and a surface portion of the oxide superconductor thin film having a substantial thickness changes into non-superconducting layer (21) of a compound oxide which is composed of the same constituent elements as those of the oxide superconductor but includes the oxygen amount less than that of the oxide superconductor and a thin superconducting channel (20) is formed under the non-superconducting layer (21). A portion of the non-superconducting layer (21), which will become the non-superconducting region is selectively masked (43), and heated in an oxidation atmosphere so that oxygen penetrates into the non-superconductor layer (21) from exposed surface and the compound oxide of the exposed portion of the non-superconductor layer changes into the oxide superconductor which is electrically connected to the superconducting channel. IMAGE IMAGE
机译:为了制造在其表面部分处及其附近具有至少一个非超导区域的超导薄膜,在基板(1)的表面上形成氧化物超导薄膜(2)。在高真空环境中加热氧化物超导薄膜,使氧化物超导晶体的氧气从氧化物超导薄膜的表面逸出,并且厚度很大的氧化物超导薄膜的表面部分变为非超导层(由与氧化物超导体的组成元素相同的组成元素组成但氧含量小于氧化物超导体的组成氧化物的复合氧化物,在非超导层(21)下方形成了一个薄的超导通道(20)。 )。非超导层(21)的将成为非超导区域的一部分被选择性地掩蔽(43),并在氧化气氛中加热,使得氧从暴露的表面渗透到非超导层(21)中,并且非超导体层的暴露部分的复合氧化物变为电连接到超导沟道的氧化物超导体。 <图像> <图像>

著录项

  • 公开/公告号CA2077047A1

    专利类型

  • 公开/公告日1993-03-01

    原文格式PDF

  • 申请/专利权人 SUMITOMO ELECTRIC INDUSTRIES LTD.;

    申请/专利号CA19922077047

  • 发明设计人 TANAKA SO;IIYAMA MICHITOMO;

    申请日1992-08-27

  • 分类号H01L39/22;H01L39/24;

  • 国家 CA

  • 入库时间 2022-08-22 05:08:28

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