MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SURFACE LIGHT EMITTING SEMICONDUCTOR LASER, SURFACE LIGHT EMITTING SEMICONDUCTOR ELEMENT, OPTICAL TRANSMITTING/RECEIVING MODULE, AND OPTICAL COMMUNICATION SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device, which can control pinching due to oxidation on the basis of reflectivity change even when an AlAs layer is comparatively thin.;SOLUTION: The method of manufacturing semiconductor device comprises the steps of radiating, in an oxidation furnace the light to an object to be measured including a layer to be oxidized in a semiconductor multilayer film structure in; detecting the reflected light from the object to be measured during the oxidation reaction; calculating a reflectivity of the reflected light, an average reflectivity, a variation rate of reflectivity, and a variation rate of the average reflectivity; and detecting progress of oxidation reaction based on the result of calculation in order to control the oxidation reaction. The object to be measured is a monitor sample on a semiconductor substrate and at least a part of the upper portion of the layer to be oxidized of the semiconductor multilayer film structure is removed by the etching process.;COPYRIGHT: (C)2004,JPO