METHOD FOR MANUFACTURING SURFACE-EMITTING SEMICONDUCTOR LASER ELEMENT, CRYSTAL GROWING APPARATUS, SURFACE-EMITTING SEMICONDUCTOR LASER ELEMENT USING THEM, OPTICAL TRANSMITTING MODULE USING SURFACE-EMITTING SEMICONDUCTOR LASER ELEMENT, OPTICAL TRANSMITTING/RECEIVING MODULE, AND OPTICAL COMMUNICATION SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a GaInNAs surface-emitting semiconductor laser element of high quality and practical level and to provide a crystal growing apparatus for realizing the manufacturing method, a surface-emitting semiconductor laser element formed by using them, an optical transmitting module using the surface-emitting semiconductor laser element, an optical transmitting/receiving module, and an optical communication system.;SOLUTION: The method for manufacturing the surface-emitting semiconductor laser element includes a resonator structure containing an active region 23 including an active layer on a semiconductor substrate 20 and reflecting mirrors 21, 25 respectively provided at the upper and lower parts of the active layer. In this method, the active layer 23 contains Ge, In, N and As as main components. The lower reflecting mirror 21 formed between the semiconductor substrate 20 and the active layer 23 contains a semiconductor distributed Bragg reflecting mirror in which a refractive index periodically changes and which reflects an incident light by an optical wave interference. The active layer 23 grows by an MBE method. The reflecting mirror (for example, a reflecting mirror 25) of at least p side of the reflecting mirror grows by an MOCVD method.;COPYRIGHT: (C)2005,JPO&NCIPI