RESIN FOR PHOTORESIST, METHOD FOR PRODUCING THE SAME AND PHOTORESIST COMPOSITION

摘要

PROBLEM TO BE SOLVED: To provide a resin affording the production of a photoresist having excellent features such as resolution, sensitivity, heat resistance, a wide focus margin or a wide exposure margin in a lithographic applications using especially KrF excimer laser as a chemically amplified resist and to provide a photoresist composition.;SOLUTION: The resin for the photoresist is obtained by adding p-hydroxystyrene having a hydroxy group protected with a group leaving by actions of an acid to a part of an aromatic ring of a novolak type phenol resin prepared by reacting phenols with aldehydes in the presence of an acidic catalyst. The photoresist composition consists essentially of the resin for the photoresist, a compound generating the acid by actions of light and a solvent dissolving the resin for the photoresist and the compound generating the acid.;COPYRIGHT: (C)2004,JPO&NCIPI