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ADDITIVE FOR PHOTORESIST AND PHOTORESIST COMPOSITION

机译:光阻剂和光阻剂的添加剂

摘要

PROBLEM TO BE SOLVED: To provide an additive for a photoresist having excellent transparency for ArF excimer light and improves the resolution, dry etching property and sensitivity, and to provide a photoresist composition.;SOLUTION: The additive for a photoresist comprises a compound expressed by general formula (I) and/or a compound expressed by general formula (II). The additive for a photoresist is a chemically amplified photoresist composition with, as essential components, a polymer which changes into alkali-soluble by the effect of an acid, a compound which generates an acid by the effect of light, and a solvent which dissolves them. The additive for a photoresist and the photoresist composition obtained by using the same are useful particularly for ArF excimer light.;COPYRIGHT: (C)2004,JPO
机译:解决的问题:提供一种对ArF准分子光具有优异的透明性并改善分辨率,干蚀刻性能和灵敏度的光致抗蚀剂添加剂,并提供一种光致抗蚀剂组合物。通式(I)和/或通式(II)表示的化合物。用于光致抗蚀剂的添加剂是化学放大的光致抗蚀剂组合物,其具有作为基本成分的聚合物,该聚合物通过酸的作用变为碱溶性的,通过光的作用产生酸的化合物,以及溶解它们的溶剂。 。用于光致抗蚀剂的添加剂和使用该光致抗蚀剂组合物获得的光致抗蚀剂组合物特别用于ArF受激准分子光。;版权所有:(C)2004,JPO

著录项

  • 公开/公告号JP2004062010A

    专利类型

  • 公开/公告日2004-02-26

    原文格式PDF

  • 申请/专利权人 SUMITOMO BAKELITE CO LTD;

    申请/专利号JP20020222642

  • 发明设计人 ONISHI OSAMU;

    申请日2002-07-31

  • 分类号G03F7/004;G03F7/039;H01L21/027;

  • 国家 JP

  • 入库时间 2022-08-21 23:28:37

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