首页> 外国专利> ADDITIVE FOR PHOTORESIST AND PHOTORESIST COMPOSITION

ADDITIVE FOR PHOTORESIST AND PHOTORESIST COMPOSITION

机译:光阻剂和光阻剂的添加剂

摘要

PROBLEM TO BE SOLVED: To provide an additive for a photoresist having excellent transparency for ArF excimer light and capable of improving the resolution, dry etching property and sensitivity, and to provide a photoresist composition.;SOLUTION: The additive for a photoresist comprises a compound expressed by general formula (I) and/or a compound expressed by general formula (II). The additive for a photoresist is a chemically amplifying photoresist composition essentially comprising a polymer which changes into alkali-soluble by the action of an acid, a compound which generates an acid by the action of light, and a solvent which dissolves them. The additive for a photoresist and the photoresist composition are useful particularly for ArF excimer light.;COPYRIGHT: (C)2004,JPO
机译:解决的问题:提供一种用于光致抗蚀剂的添加剂,其对ArF准分子光具有优异的透明性,并且能够改善分辨率,干蚀刻性能和灵敏度,并提供一种光致抗蚀剂组合物;解决方案:用于光致抗蚀剂的添加剂包括化合物通式(I)表示的化合物和/或通式(II)表示的化合物。用于光致抗蚀剂的添加剂是化学放大的光致抗蚀剂组合物,其主要包含通过酸的作用变为可溶于碱的聚合物,通过光的作用而产生酸的化合物以及溶解它们的溶剂。用于光致抗蚀剂的添加剂和光致抗蚀剂组合物特别用于ArF准分子光。;版权所有:(C)2004,JPO

著录项

  • 公开/公告号JP2004062011A

    专利类型

  • 公开/公告日2004-02-26

    原文格式PDF

  • 申请/专利权人 SUMITOMO BAKELITE CO LTD;

    申请/专利号JP20020222643

  • 发明设计人 ONISHI OSAMU;

    申请日2002-07-31

  • 分类号G03F7/004;G03F7/039;H01L21/027;

  • 国家 JP

  • 入库时间 2022-08-21 23:28:37

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号