ELECTRON BEAM PROJECTION EXPOSURE MASK AND ELECTRON BEAM PROJECTION EXPOSURE METHOD

摘要

PROBLEM TO BE SOLVED: To improve the positioning accuracy in the use of an electron beam projection exposure mask and an electron beam projection exposure method by using a simplified procedure for achieving high-precision correction.;SOLUTION: A thinned membrane region 5 not participating in pattern exposure is set along the edges of a subfield 2, and apertures 6 are formed in the membrane region 5 for the transmission of electron beams for a mark-scanning process over the membrane region 5.;COPYRIGHT: (C)2004,JPO&NCIPI