PROBLEM TO BE SOLVED: To make rigidity of an ink flow path high and to make high frequency ejecting of fine ink drops possible by forming an ink cavity by making a hole on an Si base sheet by means of dry etching. ;SOLUTION: Thermal oxidation films 7 and 8 are formed on both faces of an Si base sheet and then, a pattern corresponding to an ink cavity 3, an ink reservoir 5 and a feeding path 4 is formed by means of photoetching. In this instance, in the pattern corresponding to the feeding path 4, etching is performed so as to leave a part of the thermal oxidation film 7 to make it a thermal oxidation film 7a. Then, to the thermal oxidation film 7 side of the Si base sheet 1, the ink cavity 3 and the ink reservoir 5 are formed through etching to penetration through the Si base sheet 1 by means of a time modulation(TM) method. Then, the Si base sheet 1 is treated under a condition where the thermal oxidation film 7a can be removed and dry etching is applied by means of the TM method to form the feeding path 4. Finally, the Si base sheet is treated to remove the thermal oxidation films 7a and 8 are removed.;COPYRIGHT: (C)1997,JPO
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