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CATALYTIC CHEMICAL VAPOR DEPOSITION METHOD AND CATALYTIC CHEMICAL VAPOR DEPOSITION DEVICE

机译:催化化学气相沉积方法和催化化学气相沉积装置

摘要

PROBLEM TO BE SOLVED: To provide a catalytic chemical vapor deposition method and a catalytic chemical vapor deposition device in which the control of a substrate temperature can easily be performed without the limitation of substrate materials, the efficiency of energy is high while increasing a thin film deposition rate, and the stabilization of film performance is possible.;SOLUTION: In the catalytic chemical vapor deposition method where a deposition precursor formed by decomposing at least a part of a gaseous starting material with a heated catalyst body consisting of a metal or an intermetallic compound is deposited on a substrate to form a thin film, as the catalyst body, the one whose surface has been subjected to ruggedness formation treatment is used.;COPYRIGHT: (C)2004,JPO
机译:要解决的问题:为了提供一种催化化学气相沉积方法和催化化学气相沉积装置,其中可以容易地进行基板温度的控制而不受基板材料的限制,在增加薄膜的同时能量效率很高。解决方案:在催化化学气相沉积方法中,通过将至少一部分气态原料与由金属或金属间化合物组成的加热催化剂体分解而形成的沉积前体化合物沉积在基材上形成薄膜,作为催化剂体,使用表面经过粗糙形成处理的催化剂。;版权所有:(C)2004,JPO

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