首页> 外国专利> METHOD FOR FORMING SINGLE CRYSTAL THIN FILM ON ELECTROMAGNETIC STEEL SUBSTRATE, AND SINGLE-CRYSTAL THIN-FILM DEVICE THEREFOR

METHOD FOR FORMING SINGLE CRYSTAL THIN FILM ON ELECTROMAGNETIC STEEL SUBSTRATE, AND SINGLE-CRYSTAL THIN-FILM DEVICE THEREFOR

机译:在电磁钢基体上形成单晶薄膜的方法及其单晶薄膜器件

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a single-crystal thin film on an electromagnetic steel substrate and a single-crystal thin-film device, which enables growth of a good quality single-crystal thin film on an electromagnetic steel sheet, by employing a laser MBE device on a substrate which has been planarized on atomic level.;SOLUTION: The surface of the electromagnetic steel substrate 12 is subjected to CMP substrate polishing by colloidal silica, followed by annealing under an ultra-high vacuum condition to form on the substrate 12 a crystalline surface which is flat at an atomic level. An oxide film on the flat crystal surface is removed by heat treatment to grow a group III nitride by laser MBE method using a target 11 on the substrate 12 which has been planarized at an atomic level.;COPYRIGHT: (C)2004,JPO
机译:解决的问题:提供一种在电磁钢基材上形成单晶薄膜的方法和一种单晶薄膜装置,其能够在电磁钢板上生长高质量的单晶薄膜,通过在原子水平上被平坦化的基板上使用激光MBE器件;解决方案:电磁钢基板12的表面通过胶体二氧化硅进行CMP基板抛光,然后在超高真空条件下退火以形成在衬底12上的晶体表面在原子水平上是平坦的。通过热处理去除平面晶体表面上的氧化膜,并通过激光MBE方法在衬底12上以原子水平进行平面化的靶11来生长III族氮化物。;版权所有:(C)2004,JPO

著录项

  • 公开/公告号JP2004063834A

    专利类型

  • 公开/公告日2004-02-26

    原文格式PDF

  • 申请/专利权人 JAPAN SCIENCE & TECHNOLOGY CORP;

    申请/专利号JP20020220804

  • 发明设计人 OSHIMA MASAHARU;FUJIOKA HIROSHI;

    申请日2002-07-30

  • 分类号H01L21/203;C23C14/28;C30B23/08;C30B29/38;H01L33/00;

  • 国家 JP

  • 入库时间 2022-08-21 23:28:04

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