Improvement of optical extraction performance of nitriding gallium light-emitting diode

摘要

The photoelectron device has semiconductor structure (10) on the baseplate (12). Plane surface form of this device, interior angle (1 and 2) in two acute angles and is quadrilateral has with the interior angle (1, 2) in two obtuse angles. One of electrode pad unit (31) is arranged separated from this quadrilateral apex. To possess the transparent electrode (32) it is possible this device.