Being activated annealing manner in order to activate activated annealing

摘要

PROBLEM TO BE SOLVED: To enhance the activation efficiency of an injected impurity, without scattering and to improve characteristics by performing a high-temperature and short-time instantaneous annealing to a semiconductor substrate as a first heat treatment, and performing a second heat treatment at a lower temperature than the first heat treatment continuously and for a longer time. ;SOLUTION: Si atoms are injected at a low energy to create a thin active layer on a GaAs substrate, and a first heat treatment and a second heat treatment are continuously performed as an activation annealing treatment for activating injected Si. In the activation annealing treatment, a first a instantaneous annealing is executed as the first heat treatment for a short time at a high temperature (0.1 sec at 950°C in this case). Then, when the first heat treatment is completed and an ambient temperature decreases to 700°C, a second heat treatment is initiated continuously. In the first heat treatment, for example, 700°C is maintained for 300 sec and then a gradual temperature decrease process is initiated, thus positively performing a substitution reaction.;COPYRIGHT: (C)1999,JPO