Method of measuring the integrity of the gate dielectric and a method for measuring stress dielectric leakage current by using a corona discharge

摘要

Are determined using a non-contact method that does not require any test structures on the wafer, the density of the GOI defects and SILC characteristics of a silicon wafer with a (SiO 2, for _example) the dielectric layer thin. External method, a dielectric and current step of applying stress to the dielectric layer by corona discharge, by monitoring the neutralization of the corona discharge under illumination after stressed - and a step of measuring the (I-V) induced voltage composed. The measurement of I-V, which was conducted as a function of the corona fluence and provide SILC characteristics of the wafer. The dielectric constant compared in the field below SILC characteristics, and provides a measure of the GOI defect density. By using the I-V characteristics corresponding to the low fluence does not produce a measurable SILC, to determine the thickness of the dielectric layer.