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Programmable memory cell using charge trapping in a gate oxide
Programmable memory cell using charge trapping in a gate oxide
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机译:在栅氧化层中使用电荷俘获的可编程存储单元
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摘要
An illustrative embodiment of the present invention includes a non-volatile, reprogrammable circuit switch. The circuit switch includes a metal oxide semiconductor field effect transistor (MOSFET) in a substrate. The MOSFET has a source region, a drain region, a channel region between the source and drain regions, and a gate separated from the channel region by a gate oxide. According to the teachings of the present invention, the MOSFET is a programmed MOSFET having a charge trapped in the gate oxide adjacent to the source region such that the channel region has a first voltage threshold region (Vt1) and a second voltage threshold region (Vt2).
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