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Field-effect transistors with high-sensitivity gates
Field-effect transistors with high-sensitivity gates
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机译:具有高灵敏度栅极的场效应晶体管
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摘要
A field-effect transistor (FET) includes a source electrode, a drain electrode, a gate electrode, a gate dielectric, and a semiconductor layer that functions as an active channel of the transistor. The active channel is configured to carry a current between the source and drain electrodes and has a conductivity responsive to voltages applied the gate electrode. The gate dielectric is located between the gate electrode and the semiconductor layer and includes a quasi-1D charge or spin density wave material.
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