Semiconductor laser device including ARROW structure formed without P-As interdiffusion and Al oxidation

摘要

In a semiconductor laser device: an n-type In_0.49Ga_0.51P cladding layer, an undoped or n-type In_x1Ga_1-x1As_1-y1P_y1 optical waveguide layer, an In_x3Ga_1-x3As_1-y3P_y3 compressive-strain quantum-well active layer, an undoped or p-type In_x1Ga_1-x1As_1-y1P_y1 optical waveguide layer, a p-type In_0.49Ga_0.51P cladding layer, and a p-type GaAs etching stop layer are formed on an n-type GaAs substrate; a p-type In_x8Ga_1-x8P etching stop layer and an n-type GaAs current confinement layer are formed corresponding to high-refractive-index regions which realize an ARROW structure; a p-type In_x9Ga_1-x9P etching stop layer is formed over the n-type GaAs current confinement layer and exposed areas of the first etching stop layer; a p-type GaAs etching stop layer and an n-type In_0.49Ga_0.51P current confinement layer are formed in regions other than a current injection region; and a p-type In_0.49Ga_0.51P cladding layer and a p-type GaAs contact layer are formed over the entire upper surface.