Method for forming fine patterns through effective glass transition temperature reduction

摘要

A method for forming fine patterns, particularly contact holes, on semiconductor devices by forming an ArF resist pattern and then reducing the size of pattern openings by exposing the resist pattern to radiation from an VUV (vacuum ultraviolet) excimer laser or E-beam radiation during thermal treatment to reduce, temporarily, the T_g of the resist pattern and allow it to flow, thereby reducing the size of the spaces and openings in the pattern.