Method for formation of a contact of low resistance between a metal material and an organic material of an organic semiconductor device and method for the creation of a transistor of effect of CaMPO insulated gate of high performance

摘要

Method for formation of a contact of low resistance between a metal material and an organic material of an organic semiconductor device and method for the creation of a transistor of effect of CInsulated gate ampo high performance ".A process of thermal annealing at a high temperature creates a contact of low resistance between a metal material and an organic material of an organic semiconductor device.It improves the efficiency of the injection of carriers. The process ohmicos form contacts and Schottky contacts.In addition, the process can cause migration or diffusion of metal atoms or ions to the inside of the organic material, can make the organic material crystallize, or both.The resulting organic semiconductor device has improved operational characteristics such as faster operating speeds.Instead of using heat, the process may use other forms of energy, such as voltage, current energy of electromagnetic radiation for localized heating.The infrared energy and ultraviolet energy.An organic diode are described comprising improved copy aluminum, carbon C ~ 60 ~, and copper, as well as examples of field effect transistor insulated gate.