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METHOD OF DEPOSITING CVD AND ALD FILMS ONTO LOW-DIELECTRIC-CONSTANT DIELECTRICS

机译:在低介电常数电介质上沉积CVD和ALD膜的方法

摘要

Title: METHOD FOR IMPROVING NUCLEATION AND ADHESION OF CVD AND ALD FILMS DEPOSITED ONTO LOW-DIELECTRIC-CONSTANT DIELECTRICSAbstract: A method to improve nucleation and / or adhesion of a CVD or ALD-deposited film / layer onto a low-dielectric constant (low-k) dielectric layer, such as a polymeric dielectric or a carbon-doped oxide. In an embodiment, the method includes providing a substrate into a deposition chamber. A dielectric layer having a reactive component is formed over the substrate. The formed dielectric layer having the reactive component is then processed to produce polar groups or polar sites at least on a surface of the formed dielectric layer. The present invention forms a low-k organic polymer dielectric layer or an organic-doped oxide dielectric layer having improved nucleation and/or adhesion properties for a subsequently deposited layer such as a barrier material layer.
机译:标题:改善沉积在其上的CVD和ALD膜的成核和粘附的方法低介电常数介电体摘要:一种改善低介电常数的CVD或ALD沉积膜/层的成核和/或粘附的方法常数(低k)介电层,例如聚合物介电层或碳掺杂氧化物。在一个实施例中,该方法包括将衬底提供到沉积室中。具有反应性成分的介电层形成在衬底上方。的然后处理形成的具有反应性成分的介电层,以至少在硅的表面上产生极性基团或极性位点。形成的介电层。本发明形成低k有机聚合物电介质层或有机掺杂氧化物电介质对于随后沉积的层,例如阻挡材料层,具有改善的成核和/或粘附特性的层。

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