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METHOD OF DEPOSITING CVD AND ALD FILMS ONTO LOW-DIELECTRIC-CONSTANT DIELECTRICS

机译:在低介电常数电介质上沉积CVD和ALD膜的方法

摘要

A method to improve nucleation and/or adhesion of a CVD or ALD-deposited film/layer onto a low-dielectric constant (low-k) dielectric layer, such as a polymeric dielectric or a carbon-doped oxide. In an embodiment, the method includes providing a substrate into a deposition chamber. A dielectric layer having a reactive component is formed over the substrate. The formed dielectric layer having the reactive component is then processed to produce polar groups or polar sites at least on a surface of the formed dielectric layer. ;The present invention forms a low-k organic polymer dielectric layer or an organic-doped oxide dielectric layer having improved nucleation and/or adhesion properties for a subsequently deposited layer such as a barrier material layer.
机译:一种改善CVD或ALD沉积膜/层在低介电常数(low-k)介电层(例如聚合物介电层或碳掺杂氧化物)上的成核和/或粘附的方法。在一个实施例中,该方法包括将衬底提供到沉积室中。具有反应性成分的介电层形成在衬底上方。然后处理所形成的具有反应性成分的介电层,以至少在所形成的介电层的表面上产生极性基团或极性位点。本发明形成了低k有机聚合物介电层或有机掺杂的氧化物介电层,其对于随后沉积的层例如阻挡材料层具有改善的成核和/或粘附特性。

著录项

  • 公开/公告号EP1432842A2

    专利类型

  • 公开/公告日2004-06-30

    原文格式PDF

  • 申请/专利权人 INTEL CORPORATION;

    申请/专利号EP20020778382

  • 申请日2002-09-26

  • 分类号C23C16/40;C23C16/56;H01L21/768;

  • 国家 EP

  • 入库时间 2022-08-21 22:52:04

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