METHOD OF APPLICATION OF DISPLACEMENT REACTION TO FORM A CONDUCTIVE CAP LAYER FOR FLIP-CHIP, COB, AND MICRO METAL BONDING

摘要

A method of forming a conductive cap layer over a metal bondingpad comprises the following steps. A semiconductor structure is provided havingan exposed, recessed metal bonding pad within a layer opening. The layer has anupper surface. The exposed metal bonding pad is treated with a solution containingsoluble metal ions to form a conductive cap over the metal bonding pad. Theconductive cap layer is comprised of the solution metal and has a predeterminedthickness. An external bonding element may then be bonded to the conductive cap,forming an electrical connection with the metal bonding pad.