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Method of application of conductive cap-layer in flip-chip, cob, and micro metal bonding

机译:在倒装芯片,芯棒和微金属键合中应用导电覆盖层的方法

摘要

A method of bonding a bonding element to a metal bonding pad comprises the following steps. A semiconductor structure having an exposed, recessed metal bonding pad within a layer opening is provided. The layer has an upper surface. A conductive cap having a predetermined thickness is formed over the metal bonding pad. A bonding element is bonded to the conductive cap to form an electrical connection with the metal bonding pad.
机译:将结合元件结合到金属结合垫的方法包括以下步骤。提供了一种半导体结构,该半导体结构在层开口内具有暴露的,凹陷的金属键合焊盘。该层具有上表面。在金属焊盘上方形成具有预定厚度的导电盖。结合元件结合到导电盖以与金属结合垫形成电连接。

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