USE OF QUASI-ONE-DIMENSIONAL TRANSITION METAL TERNARY COMPOUNDS AND QUASI-ONE-DIMENSIONAL TRANSITION METAL CHALCOGENIDE COMPOUNDS AS ELECTRON EMITTERS

摘要

The invention refers to the use of quasionedimensional ternary compounds of transition metals MxHyHaz (M is a transition metal Mo, W, Ta, Nb; H is sulfur (S), selenium (Se), tellurium (Te); Ha is iodine (J)) and doped quasionedimensional ternary compounds of transition metals MxHyHaz (M is Ta, Ti, Nb; H is sulfur (S), selenium (Se), tellurium (Te); Ha is iodine (J)) with elements of the group 1b (silver (Ag), gold (Au) or copper (Cu)) as electron emitters under the effect of electric field. The proportion of quasionedimensional ternary compounds of transition metals or/and doped quasionedimensional ternary compounds of transition metals doped with elements of the group 1b in active material is between 0.1-99.9 %, and the remaining proportion may be additives in the form of conductive, nonconductive or semiconductive compounds or composites. Electron emission is taking place at a pressure less than 1 mbar.