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Use of quasi-one-dimensional transition metal ternary compounds and quasi-one-dimensional transition metal chacogenide compounds as electron emitters
Use of quasi-one-dimensional transition metal ternary compounds and quasi-one-dimensional transition metal chacogenide compounds as electron emitters
The present invention pertains to the use of quasi-one-dimensional transition metal ternary compounds MxHyHaz (where M is a transition metal Mo, W, Ta, Nb; H is sulfur (S), selenium (Se), tellurium (Te); Ha is iodine (I)) and of doped quasi-one-dimensional transition metal ternary compounds MxHyHaz, (where M=Ta, Ti, Nb; H is sulfur (S), selenium (Se), tellurium (Te); Ha is iodine (I)) with elements of group 1b (silver) (Ag), gold (Au), or copper (Cu)) as electron emitters under the influence of an external electric field. The percentage of quasi-one-dimensional transition metal ternary compounds doped with elements of group 1b in the active material ranges from 0.01 to 99.9 the rest consisting of additives in the form of conducting, non-conducting or semi-conducting compounds or composites. Electron emission takes place at a pressure below 1 mbar.
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机译：本发明涉及准一维过渡金属三元化合物M x H y Ha z （其中M是过渡金属Mo，W，Ta，Nb; H是硫（S），硒（Se），碲（Te）; Ha是碘（I））和掺杂的准一维过渡金属三元化合物M H y Ha z ，（其中M = Ta，Ti，Nb; H是硫（S），硒（Se），碲（Te）; Ha是碘（I）），在其下，元素 1 b （银）（Ag），金（Au）或铜（Cu）的元素作为电子发射体。外部电场的影响。掺杂有 1 b 元素的准一维过渡金属三元化合物在活性材料中的百分比范围为0.01至99.9，其余的形式为添加剂导电，非导电或半导电的化合物或复合材料。电子发射在低于1毫巴的压力下发生。
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