USE OF QUASI-ONE-DIMENSIONAL TRANSITION METAL TERNARY COMPOUNDS AND QUASI-ONE-DIMENSIONAL TRANSITION METAL CHALCOGENIDE COMPOUNDS AS ELECTRON EMITTERS

摘要

The present invention pertains to the use of quasi­one-dimensional transition metal ternary compounds MXHyHaZ (where M is a transition metal Mo, W, Ta, Nb; H is sulfur (S), selenium (Se), tellurium (Te); Ha is iodine (I)) and of doped quasi-one-dimensional transition metal ternary compounds MXHyHaZ, (where M=Ta, Ti, Nb; H is sulfur (S), selenium (Se), tellurium (Te); Ha is iodine (I)) with elements of group lb (silver (Ag), gold (Au), or copper (Cu)) as electron emitters under the influence of an external electric field. The percentage of quasi-one­dimensional transition metal ternary compounds and/or doped quasi-one-dimensional transition metal ternary compounds doped with elements of group lb in the active material ranges from 0.01 to 99.9 the rest consisting of additives in the form of conducting, non-conducting or semi-conducting compounds or composites. Electron emission takes place at a pressure below 1 mbar.