NEGATIVE DIFFERENTIAL RESISTANCE (NDR) ELEMENT AND MEMORY WITH REDUCED SOFT ERROR RATE

摘要

An active negative differential resistance element (NDR FET) (100) and a memory device (such as SRAM) using such elements is disclosed. Soft error rate (SER) performance for NDR FETs (100) and such memory devices are enhanced by adjusting a location of charge traps (131,132) in a charge trapping layer that is responsible for effectuating an NDR behavior. Both an SER and a switching speed performance characteristic can be tailored by suitable placement of the charge traps (131,132).