Novel design of multiple negative-differential resistance (NDR) device in a 32nm CMOS technology using TCAD

摘要

We propose a novel multiple negative differential resistance (NDR) device with the positive inclined tri-state voltage transfer characteristics (VTC) between drain and gate of 32nm n-type MOSFET based on gate-induced drain leakage (GIDL) enhanced off-state CMOS ternary inverter. The ultrahigh 1^st and 2^nd peak-to-valley current ratio (PVCR) over 10⁴ can be designed with high slope of inclined ternary VTC by increasing the GIDL effects.