RADIATION-SENSITIVE RESIN COMPOSITION, PROCESS FOR PRODUCING THE SAME AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE THEREWITH

摘要

A chemical amplification type radiation-sensitive resin composition comprising at least a base resin [1] composed of an alkali soluble resin or an alkali insoluble or alkali hardly soluble resin protected by an acid dissociable protective group wherein the content of ultrahigh molecular weight components whose weight average molecular weight in terms of polystyrene as measured by gel permeation chromatography according to multiangular light scattering is 1000 thousand or greater is 1 ppm or less, a photoacid generator [2] capable of generating an acid upon exposure to radiation and a solvent [3]. This radiation-sensitive resin composition is applied onto work object (2) by coating so as to form photoresist layer (3), and subjected to exposure and development so as to form 0.2 μm or less fine resist pattern (4). Thereafter, dry etching is performed so as to effect pattering for semiconductor device gate electrode, hole configuration, channel configuration, etc. In this manner, patterning with minimized occurrence of pattern defects such as microbridge can be realized.