首页> 外国专利> INFRARED DETECTION ELEMENT AND METHOD FOR FABRICATING THE SAME AND EQUIPMENT FOR MEASURING TEMPERATURE

INFRARED DETECTION ELEMENT AND METHOD FOR FABRICATING THE SAME AND EQUIPMENT FOR MEASURING TEMPERATURE

机译:红外检测元件及其制造方法和用于测量温度的设备的方法

摘要

ÄObjectÜ To provide a thermopile infrared detecting element capable of accurate temperature measurement at low cost. ÄSolving MeansÜ An infrared detecting element 1 using a silicon nitride film as a first structure layer 22 constituting a structure of a membrane portion 4 is provided. Unlike silicon oxide, the first structure layer 22 has internal stress in the tensile direction, and can thus prevent the occurrence of bending. Also, diodes D1 and D2 can be formed in a silicon substrate 2 by using the first structure layer 22 as an element isolation region, and thus deformation of a thermopile 12 due to a change in the environment can be prevented to suppress measurement error of the thermopile 12. Furthermore, a high accuracy infrared detecting element capable of accurately detecting the temperature of cold junctions using the diodes D1 and D2 can be provided. IMAGE
机译:Ä对象Ü提供一种热电堆红外线检测元件,该元件能够以低成本进行精确的温度测量。解决方案提供一种红外线检测元件1,其使用氮化硅膜作为构成膜部4的结构的第一结构层22。与氧化硅不同,第一结构层22在拉伸方向上具有内应力,因此可以防止弯曲的发生。另外,通过将第一结构层22用作元件隔离区域,可以在硅基板2中形成二极管D1和D2,从而可以防止由于环境变化引起的热电堆12的变形,从而抑制了热电堆12的测量误差。热电堆12。此外,可以提供能够使用二极管D1和D2准确地检测冷结温度的高精度红外检测元件。 <图像>

著录项

  • 公开/公告号EP1312903A4

    专利类型

  • 公开/公告日2004-09-29

    原文格式PDF

  • 申请/专利权人 SEIKO EPSON CORPORATION;

    申请/专利号EP20020710445

  • 申请日2002-01-31

  • 分类号G01J1/02;G01J5/02;G01J5/16;A61B5/00;H01L27/14;H01L35/32;H01L37/00;H04B10/148;

  • 国家 EP

  • 入库时间 2022-08-21 22:54:44

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