首页> 外国专利> THREE-DIMENSIONAL METAL DEVICES HIGHLY SUSPENDED ABOVE SEMICONDUCTOR SUBSTRATE, THEIR CIRCUIT MODEL, AND METHOD FOR MANUFACTURING THE SAME

THREE-DIMENSIONAL METAL DEVICES HIGHLY SUSPENDED ABOVE SEMICONDUCTOR SUBSTRATE, THEIR CIRCUIT MODEL, AND METHOD FOR MANUFACTURING THE SAME

机译:高度悬浮在半导体基质上的三维金属器件,其电路模型和制造相同金属器件的方法

摘要

Disclosed are a three dimensional metal device floated over a semiconductor substrate, a circuit thereof, and a manufacturing method thereof. A passive electric device for wireless communications and optical communications, such as a spiral inductor, a solenoid inductor, a spiral transformer, a solenoid transformer, a micro mirror, a transmission line is floated over and apart by a few ten micrometers from the semiconductor substrate. These three dimensional metal devices remarkably decrease a signal loss to the substrate, to thereby enhance the device performance, to allow a modeling of a device separated from the substrate, and to make it possible to form an integrated circuit below the device. Further, the three dimensional metal device is manufactured in a monolithic method on the integrated circuit such that it does not affect on the integrated circuit formed therebelow.
机译:公开了一种漂浮在半导体衬底上的三维金属器件,其电路及其制造方法。用于无线通信和光通信的无源电子设备,例如螺旋电感器,螺线管电感器,螺旋变压器,螺线管变压器,微镜,传输线,浮在半导体衬底上方并与之间隔数十微米。 。这些三维金属器件显着降低了对基板的信号损耗,从而提高了器件性能,允许对与基板分离的器件进行建模,并使得可以在器件下方形成集成电路。此外,三维金属器件以单片方法制造在集成电路上,使得其不影响在其下方形成的集成电路。

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