An accurate circuit level prediction model for predicting performance degradation due to negative bias temperature (NBT) stress and a device lifetime prediction method are proposed in this paper. The proposed model consists of a threshold voltage (Vth) shift and a drain current (ID) reduction models. The developed models are incorporated into a compact MOSFET model so that we can directly link the device electrical degradation to the circuit simulation. The validity of the developed models is confirmed by the experimental results of I-V characteristics of pMOSFET before and after stress. Then, the circuit performance prediction is carried out for a 199-stage ring oscillator on its waveform and oscillation frequency. Excellent agreements between experimental results and predicted results are obtained. Since only a suitable acceleration method allows us to develop the accurate models, the new negative bias temperature instability (NBTI) acceleration method using cold-holes is also developed. Finally, we demonstrate the accurate NBTI lifetime prediction using the method.
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机译:本文提出了一种精确的电路级预测模型,用于预测由于负偏置温度(NBT)应力导致的性能下降,以及器件寿命的预测方法。所提出的模型包括阈值电压(V th inf>)偏移和漏极电流(I D inf>)降低模型。所开发的模型被集成到紧凑的MOSFET模型中,因此我们可以将器件的电性能直接与电路仿真联系起来。应力前后pMOSFET I-V特性的实验结果证实了所开发模型的有效性。然后,针对199级环形振荡器的波形和振荡频率进行电路性能预测。获得了实验结果和预测结果之间的极好的一致性。由于只有一种合适的加速方法才能使我们开发出准确的模型,因此还开发了使用冷孔的新型负偏压温度不稳定性(NBTI)加速方法。最后,我们演示了使用该方法的准确NBTI寿命预测。
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