- METHOD FOR DRIVING SHIFT RESISTER FOR DRIVING AMORPHOUS-SILICON THIN FILM TRANSISTOR GATE

摘要

PURPOSE: A method for driving a gate shift register of a-Si thin film transistor is provided to prevent the failure of display during the implementation of a high resolution large screen display by applying a voltage source and an additional large voltage source supplied from the clock generator to the thin film transistor gate drive shift register. CONSTITUTION: A method for driving a-Si thin film transistor gate driving shift register(170) includes the steps of: receiving a first or a second clock signal; generating a second power voltage having a second high level being higher than the first high level by a fixed level and supplying the second power voltage to each of the shift registers; generating a gate line drive signal to pull-up the gate line connected to each of the shift registers during the duty period of the first or the second clock signal; starting the pull-down of the gate line by pulling down the gate line drive signal from the high level to the low level in response to the output signal of the shift register; and maintaining the pull-down of the gate line by pulling down the gate line driving signal from the low level to the high level.