Method for manufacturing GaN substrate using thermally decomposed buffer layer

摘要

PURPOSE: A method for manufacturing a GaN substrate using a thermally decomposed buffer layer is provided to considerably improve the quality of the GaN substrate. CONSTITUTION: The first GaN layer(11) is formed on a substrate(10). The second GaN layer is re-grown on the first GaN layer. Then, a thermal decomposition is carried out on the resultant structure for forming a buffer layer(13a) by separating N2 from Ga. At this time, the nitrogen is vaporized. The third GaN layer(14) is then grown on the nitrogen vaporized buffer layer. Preferably, laser beam is used for carrying out the thermal decomposition on the second GaN layer.