Semiconductor memory device having the structure of being capable of converting page length according to specific mode and method of converting page length of the semiconductor memory device

摘要

PURPOSE: A semiconductor memory device is provided which has a structure capable of converting a page length in response to a control signal. CONSTITUTION: A semiconductor memory device comprises a number of banks. Each bank comprises a number of memory cell array blocks(300). And each memory cell array block comprises a number of sub memory cell array blocks(110,120,130,140) and a number of word line drivers(111,121,131,141) corresponding to each sub memory cell array block and enabling a word line of each corresponding sub memory cell array block, and a page length control circuit receiving a column block address and control signals and enabling one or more word line drivers in response to the column block address and the control signals. The word lines of the sub memory cell array blocks are enabled in response to the enabling of the corresponding word line drivers.