首页> 外国专利> SOURCE SOLUTION FOR PREPARATION OF BISMUTH-BASED FERROELECTRIC FILM AND PREPARATION METHOD THEREOF

SOURCE SOLUTION FOR PREPARATION OF BISMUTH-BASED FERROELECTRIC FILM AND PREPARATION METHOD THEREOF

机译:铋基铁电薄膜制备的源溶液及其制备方法

摘要

PURPOSE: A source solution for the preparation of a bismuth-based ferroelectric film and its preparation method are provided, to allow the Perovskite structure to be formed easily at a low temperature by accelerating the degradation reaction between sources, thereby improving the crystallinity of a thin film. CONSTITUTION: The method comprises the steps of preparing a metal alkoxide of a metal element A selected from the group consisting of Ti, Nb and Ta; hydrolyzing the metal alkoxide to prepare a source solution of a metal element A; and dissolving the source solution of a metal element A, a metal element B selected from Sr and La and bismuth (Bi) in a mixture solvent to prepare a source solution for the preparation of a bismuth-based ferroelectric film. Preferably the source of a metal element B is Sr(OCOC7H15)5 or La(OCOC7H15)3; and the source of Bi is Bi(OCOC7H15)3.
机译:目的:提供一种用于制备铋基铁电薄膜的原料溶液及其制备方法,以通过促进原料之间的降解反应,在低温下容易地形成钙钛矿结构,从而改善薄膜的结晶度。电影。组成:该方法包括以下步骤:制备选自Ti,Nb和Ta的金属元素A的金属醇盐;水解金属醇盐以制备金属元素A的源溶液。将金属元素A,选自Sr和La的金属元素B和铋(Bi)的源溶液溶解在混合溶剂中,以制备用于制备铋基铁电膜的源溶液。优选地,金属元素B的来源是Sr(OCOC7H15)5或La(OCOC7H15)3。 Bi的来源是Bi(OCOC7H15)3。

著录项

  • 公开/公告号KR20040069412A

    专利类型

  • 公开/公告日2004-08-06

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR20030005774

  • 发明设计人 KIM NAM GYEONG;YUM SEUNG JIN;

    申请日2003-01-29

  • 分类号H01B3/00;

  • 国家 KR

  • 入库时间 2022-08-21 22:48:22

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号